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SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 7 Optimal Efficiency and Operation Configuration Single - Low Cost D - Simple Gate Drive Circuitry TO-220 FULLPAK - Low Figure-of-Merit (FOM) Ron x Qg - Fast Switching Compliant to RoHS Directive 2011/65/EU Note G * Pb containing terminations are not RoHS compliant, exemptions may apply APPLICATIONS S S Consumer Electronics D G N-Channel MOSFET - Displays (LCD or Plasma TV) Server and Telecom Power Supplies - SMPS Industrial - Welding - Induction Heating