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SiHG28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) max. at 25 C ( ) VGS = 10 V 0.123 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 120 Low input capacitance (Ciss) Qgs (nC) 17 Low switching losses due to reduced Qrr Qgd (nC) 33 Ultra low gate charge (Qg) Configuration Single Avalanche energy rated (UIS) Material categorization for definitions of compliance D please see www.vishay.com/doc?99912 TO-247AC APPLICATIONS Telecommunications - Server and telecom power supplies G Lighting - High intensity discharge (HID) S - Light emitting diodes (LEDs) D Consumer and computing S G - ATX power supplies N-Channel MOSFET Industrial