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BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol BD135 BD137 BD139 Unit VCBO 45 60 80 V Collector-Emitter Voltage VCEO 45 60 80 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 5.0 V Collector Current IC 1.5 A PD 1.25 W Power Disspation Tj 150 C Junction Temperature Tstg Storage , Temperature -55 to +150 C Classification Of hFE(2) Rank 6 10 16 Range 40-100 63-160 100-250 Device Marking BD135 = BD135 , BD137 = BD137 , BD139 = BD139 WEITRON 1/3 07-Apr-10 http //www.weitron.com.tw BD135/137/139 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage IC = 100 A, IE = 0 BD135 45 V - V(BR)CBO BD137 60 BD139 80 Collector-Base Brea