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Silicon Epitaxial Planar Transistor 2SA1104 GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 120 V Collector-emitter voltage (open base) VCEO - 120 V Collector current (DC) IC - 8 A Collector current peak value A ICM - Total power dissipation Tmb 25 Ptot - 80 W Collector-emitter saturation voltage IC = 3.5A; IB = 0.35A VCEsat - 2 V Diode forward voltage IF = 3.5A 1.5 2.0 V VF Fall time - s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V - 120 V VCESM Collector-emitter voltage (open base) - 120 V VCEO Emitter-base oltage (open colloctor) 5 V VEBO Collector current (DC) - 8 A IC Ba