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2n32352n3235

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3235 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 65 V VCEO Collector-emitter voltage Open base 55 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PC Collector power dissipation TC=25 115 W Tj Junction temperature 150 Storage temperature -65~200 Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNITThermal resistance junction to case 1.52 /W R(th) jc

 

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 2n3235.pdf Проектирование, MOSFET, Мощность

 2n3235.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n3235.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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