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2N6796MECHANICAL DATADimensions in mm (inches)TMOS FET TRANSISTOR N CHANNEL FEATURES VDSS = 100V ID = 8A ! RDSON = 0.18 TO39 METAL PACKAGEUnderside ViewPIN 1 Source PIN 2 Gate PIN 3 Drain CaseABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)VDSS DrainSource Voltage100VVDGR DrainGate Voltage (RGS = 1.0m)100VVGS GateSource Voltage20VID Drain Current Continuous8.0AIDM Drain Current Pulsed32APD Total Device Dissipation @ TC = 25C25WDerate above 25C0.2W/ CWTJ , TSTG Operating and Storage Junction Temperature Range55

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 2n6796.pdf Проектирование, MOSFET, Мощность

 2n6796.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n6796.pdf База данных, Инновации, ИМС, Транзисторы