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Isc N-Channel MOSFET Transistor IXTK102N30PFEATURESWith To-3PL packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 300 VDSSV Gate-Source Voltage 30 VGSSI Drain Current-Continuous 102 ADI Drain Current-Single Pulsed 250 ADMP Total Dissipation @T =25 700 WD CT Max. Operating Junction Temperature 150 chStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.18/WRth(ch-a) Channel-to-ambient thermal resistance 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademark