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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASEMedium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP126 TIP127 VCBO Collector-Base Voltage 60 80 100 VVCEO Collector-Emitter Voltage 60 80 100 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 5 A PC * Collector Power Dissipation 1.25 W RJA Thermal Resistance Junction to Ambient 100 /W /W RJc Thermal Resistance Junction to Case 8.33 TJ Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Mi

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 tip120 tip121 tip122 tip125 tip126 tip127.pdf Проектирование, MOSFET, Мощность

 tip120 tip121 tip122 tip125 tip126 tip127.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 tip120 tip121 tip122 tip125 tip126 tip127.pdf База данных, Инновации, ИМС, Транзисторы