Аналоги IXGA24N60C. Основные параметры
Наименование: IXGA24N60C
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ -
Максимальная рассеиваемая мощность: 150
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic| ⓘ - Максимальный постоянный ток коллектора:
48
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
2.1
V @25℃
Tj ⓘ - Максимальная температура перехода:
150
℃
tr ⓘ -
Время нарастания типовое: 25
nS
Coesⓘ - Выходная емкость, типовая: 120
pF
Тип корпуса:
TO263
Аналог (замена) для IXGA24N60C
-
подбор ⓘ IGBT транзистора по параметрам
IXGA24N60C даташит
..1. Size:98K ixys
ixga24n60c.pdf 

HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC110 TC = 110 C24 A TO-263 AA (IXGA) ICM TC
..2. Size:100K ixys
ixga24n60c ixgp24n60c.pdf 

HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC110 TC = 110 C24 A TO-263 AA (IXGA) ICM TC
0.1. Size:128K ixys
ixga24n60c4.pdf 

Advance Technical Information High-Gain IGBTs VCES = 600V IXGA24N60C4 IC110 = 24A IXGP24N60C4 VCE(sat) 2.70V IXGH24N60C4 tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G C C (
7.1. Size:188K ixys
ixga24n120c3.pdf 

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA24N120C3 IC25 = 48A IXGH24N120C3 VCE(sat) 4.2V IXGP24N120C3 High speed PT IGBTs for tfi(typ) = 110ns 10-50kHz Switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G E VGES Continuous 20 V C (TAB) V
9.1. Size:69K ixys
ixga20n120.pdf 

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T
9.2. Size:192K ixys
ixga20n250.pdf 

Advance Technical Information High Voltage IGBT VCES = 2500V IXGA20N250 IC110 = 12A VCE(sat) 3.1V For Capacitor Discharge Applications TO-263 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V G VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 30 A G = Gate C = Coll
9.3. Size:234K ixys
ixga20n120a3.pdf 

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G
9.4. Size:220K ixys
ixga20n100a3.pdf 

Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 VCE(sat) 2.3V IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V VGES Continuous 20 V
9.5. Size:210K ixys
ixga20n120b3.pdf 

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 VCE(sat) 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Trans
9.6. Size:236K ixys
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf 

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G
9.7. Size:195K ixys
ixga20n250hv.pdf 

Preliminary Technical Information High Voltage IGBT VCES = 2500V IXGA20N250HV IC110 = 12A VCE(sat) 3.1V For Capacitor Discharge Applications TO-263 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V G VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 30 A G = Gate C
9.8. Size:111K ixys
ixga20n100 ixgp20n100.pdf 

VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15
9.9. Size:110K ixys
ixga20n100.pdf 

VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15
9.10. Size:212K ixys
ixga20n120b3 ixgp20n120b3.pdf 

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 VCE(sat) 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Trans
9.11. Size:77K ixys
ixga20n60b.pdf 

IXGA 20N60B VCES = 600 V HiPerFASTTM IGBT IXGP 20N60B IC25 = 40 A VCE(sat)typ = 1.7 V tfi = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C 40 A IC90 TC = 90 C 20 A TO-263 AA (IXGA) ICM TC = 25 C,
9.12. Size:71K ixys
ixga20n120 ixgp20n120.pdf 

VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T
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