IRGP4063D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRGP4063D
Тип транзистора: IGBT
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc), W: 330
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимальный постоянный ток коллектора |Ic| @25℃, A: 96
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.14
Тип корпуса: TO247
IRGP4063D Datasheet (PDF)
irgp4063d.pdf

PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) P
auirgp4063d.pdf

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
irgp4063d1.pdf

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collecto
irgp4063dpbf.pdf

IRGP4063DPbFIRGP4063D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)
auirgp4063d auirgp4063d-e.pdf

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
Другие IGBT... IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-E , IRGP4050 , IRGP4062D , IRGP4063 , IRGB4630D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 , IRGP4069D .



Список транзисторов
Обновления
IGBT: JNG8T60FT1 | JNG80T60LS | JNG75T65HYU2 | JNG75T65HXU1 | JNG75T120QZU1 | JNG75T120QS1 | JNG75T120LS | JNG60T60HS | JNG5T65DS1 | JNG50N120QS1 | JNG50N120QFU1