APT54GA60SD30 - аналоги и описание IGBT

 

APT54GA60SD30 - аналоги, основные параметры, даташиты

Наименование: APT54GA60SD30

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 416 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 54 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃

tr ⓘ - Время нарастания типовое: 20 nS

Coesⓘ - Выходная емкость, типовая: 350 pF

Тип корпуса: TO268AB

 Аналог (замена) для APT54GA60SD30

- подбор ⓘ IGBT транзистора по параметрам

 

APT54GA60SD30 даташит

 ..1. Size:244K  microsemi
apt54ga60sd30.pdfpdf_icon

APT54GA60SD30

APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of Cres/

 4.1. Size:210K  microsemi
apt54ga60b apt54ga60s.pdfpdf_icon

APT54GA60SD30

APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved APT54GA60S through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

 5.1. Size:244K  microsemi
apt54ga60bd30.pdfpdf_icon

APT54GA60SD30

APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of Cres/

Другие IGBT... TGAN60N60FD , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , SGP30N60 , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , 100MT060WDF .

History: APT100GN120B2G

 

 

 

 

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