All IGBT. APT54GA60SD30 Datasheet

 

APT54GA60SD30 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT54GA60SD30
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 54 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 350 pF
   Qgⓘ - Total Gate Charge, typ: 158 nC
   Package: TO268AB

 APT54GA60SD30 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT54GA60SD30 Datasheet (PDF)

 ..1. Size:244K  microsemi
 apt54ga60sd30.pdf

APT54GA60SD30 APT54GA60SD30

APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of Cres/

 4.1. Size:210K  microsemi
 apt54ga60b apt54ga60s.pdf

APT54GA60SD30 APT54GA60SD30

APT54GA60B APT54GA60S600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved APT54GA60Sthrough leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

 5.1. Size:244K  microsemi
 apt54ga60bd30.pdf

APT54GA60SD30 APT54GA60SD30

APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of Cres/

Datasheet: TGAN60N60FD , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , TGD30N40P , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , 100MT060WDF .

 

 
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