All IGBT. APT54GA60SD30 Datasheet

 

APT54GA60SD30 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT54GA60SD30
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 416
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 54
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 20
   Collector Capacity (Cc), typ, pF: 350
   Total Gate Charge (Qg), typ, nC: 158
   Package: TO268AB

 APT54GA60SD30 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT54GA60SD30 Datasheet (PDF)

 ..1. Size:244K  microsemi
 apt54ga60sd30.pdf

APT54GA60SD30 APT54GA60SD30

APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of Cres/

 4.1. Size:210K  microsemi
 apt54ga60b apt54ga60s.pdf

APT54GA60SD30 APT54GA60SD30

APT54GA60B APT54GA60S600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved APT54GA60Sthrough leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

 5.1. Size:244K  microsemi
 apt54ga60bd30.pdf

APT54GA60SD30 APT54GA60SD30

APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of Cres/

Datasheet: TGAN60N60FD , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , NCE80TD65BT , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , 100MT060WDF .

 

 
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