100MT060WDF IGBT. Datasheet pdf. Equivalent
Type Designator: 100MT060WDF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 462 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 83 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.98 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 47 nS
Coesⓘ - Output Capacitance, typ: 780 pF
Qgⓘ - Total Gate Charge, typ: 460 nC
Package: MTP
100MT060WDF Transistor Equivalent Substitute - IGBT Cross-Reference Search
100MT060WDF Datasheet (PDF)
100mt060wdf.pdf
VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operationMTP Designed and qualified for industrial levelBENEFITSPRODUCT SU
vs-100mt060wdf.pdf
VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple
vs-100mt060wsp.pdf
VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu
nsm80100mt1g.pdf
NSM80100MT1GPNP Transistor with DualSeries Switching DiodeFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantTypical Applications http://onsemi.com LCD Control Board High Speed SwitchingPNP Transistor with Dual Series High Voltage SwitchingSwitching DiodeMAXIMUM RATINGS - PNP TRANSISTORRating Symbol Value Unit6 5 4Collector-E
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2