100MT060WDF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

100MT060WDF datasheet

..1. Size:168K vishay
100mt060wdf.pdf pdf_icon

VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operation MTP Designed and qualified for industrial level BENEFITS PRODUCT SU

0.1. Size:186K vishay
vs-100mt060wdf.pdf pdf_icon

VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization for definitions of compliance MTP ple

5.1. Size:238K vishay
vs-100mt060wsp.pdf pdf_icon

VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 (Package example) Designed and qu

9.1. Size:200K onsemi
nsm80100mt1g.pdf pdf_icon

NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http //onsemi.com LCD Control Board High Speed Switching PNP Transistor with Dual Series High Voltage Switching Switching Diode MAXIMUM RATINGS - PNP TRANSISTOR Rating Symbol Value Unit 6 5 4 Collector-E

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