100MT060WDF Todos los transistores

 

100MT060WDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 100MT060WDF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 462 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 83 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.98 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 47 nS
   Coesⓘ - Capacitancia de salida, typ: 780 pF
   Qgⓘ - Carga total de la puerta, typ: 460 nC
   Paquete / Cubierta: MTP
 

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100MT060WDF Datasheet (PDF)

 ..1. Size:168K  vishay
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100MT060WDF

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operationMTP Designed and qualified for industrial levelBENEFITSPRODUCT SU

 0.1. Size:186K  vishay
vs-100mt060wdf.pdf pdf_icon

100MT060WDF

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple

 5.1. Size:238K  vishay
vs-100mt060wsp.pdf pdf_icon

100MT060WDF

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu

 9.1. Size:200K  onsemi
nsm80100mt1g.pdf pdf_icon

100MT060WDF

NSM80100MT1GPNP Transistor with DualSeries Switching DiodeFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantTypical Applications http://onsemi.com LCD Control Board High Speed SwitchingPNP Transistor with Dual Series High Voltage SwitchingSwitching DiodeMAXIMUM RATINGS - PNP TRANSISTORRating Symbol Value Unit6 5 4Collector-E

Otros transistores... APT54GA60SD30 , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , TGD30N40P , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G .

History: MMG75H060XB6EN

 

 
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