100MT060WDF Даташит. Аналоги. Параметры и характеристики.
Наименование: 100MT060WDF
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 462 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 83 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.98 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 47 nS
Coesⓘ - Выходная емкость, типовая: 780 pF
Тип корпуса: MTP
- подбор IGBT транзистора по параметрам
100MT060WDF Datasheet (PDF)
100mt060wdf.pdf

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operationMTP Designed and qualified for industrial levelBENEFITSPRODUCT SU
vs-100mt060wdf.pdf

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple
vs-100mt060wsp.pdf

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu
nsm80100mt1g.pdf

NSM80100MT1GPNP Transistor with DualSeries Switching DiodeFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantTypical Applications http://onsemi.com LCD Control Board High Speed SwitchingPNP Transistor with Dual Series High Voltage SwitchingSwitching DiodeMAXIMUM RATINGS - PNP TRANSISTORRating Symbol Value Unit6 5 4Collector-E
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History: MMG200D120B6TC | AOB30B65LN2V | APTGT75DA120D1
History: MMG200D120B6TC | AOB30B65LN2V | APTGT75DA120D1



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