100MT060WDF - аналоги и описание IGBT

 

100MT060WDF - аналоги, основные параметры, даташиты

Наименование: 100MT060WDF

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 462 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 83 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.98 V @25℃

tr ⓘ - Время нарастания типовое: 47 nS

Coesⓘ - Выходная емкость, типовая: 780 pF

Тип корпуса: MTP

 Аналог (замена) для 100MT060WDF

- подбор ⓘ IGBT транзистора по параметрам

 

100MT060WDF даташит

 ..1. Size:168K  vishay
100mt060wdf.pdfpdf_icon

100MT060WDF

VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operation MTP Designed and qualified for industrial level BENEFITS PRODUCT SU

 0.1. Size:186K  vishay
vs-100mt060wdf.pdfpdf_icon

100MT060WDF

VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization for definitions of compliance MTP ple

 5.1. Size:238K  vishay
vs-100mt060wsp.pdfpdf_icon

100MT060WDF

VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 (Package example) Designed and qu

 9.1. Size:200K  onsemi
nsm80100mt1g.pdfpdf_icon

100MT060WDF

NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http //onsemi.com LCD Control Board High Speed Switching PNP Transistor with Dual Series High Voltage Switching Switching Diode MAXIMUM RATINGS - PNP TRANSISTOR Rating Symbol Value Unit 6 5 4 Collector-E

Другие IGBT... APT54GA60SD30 , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , CRG75T60AK3HD , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G .

History: 2MBI225VJ-120-50

 

 

 


 
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