Справочник IGBT. 100MT060WDF

 

100MT060WDF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: 100MT060WDF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 462 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 83 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.98 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 47 nS
   Coesⓘ - Выходная емкость, типовая: 780 pF
   Qgⓘ - Общий заряд затвора, typ: 460 nC
   Тип корпуса: MTP

 Аналог (замена) для 100MT060WDF

 

 

100MT060WDF Datasheet (PDF)

 ..1. Size:168K  vishay
 100mt060wdf.pdf

100MT060WDF 100MT060WDF

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operationMTP Designed and qualified for industrial levelBENEFITSPRODUCT SU

 0.1. Size:186K  vishay
 vs-100mt060wdf.pdf

100MT060WDF 100MT060WDF

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple

 5.1. Size:238K  vishay
 vs-100mt060wsp.pdf

100MT060WDF 100MT060WDF

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu

 9.1. Size:200K  onsemi
 nsm80100mt1g.pdf

100MT060WDF 100MT060WDF

NSM80100MT1GPNP Transistor with DualSeries Switching DiodeFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantTypical Applications http://onsemi.com LCD Control Board High Speed SwitchingPNP Transistor with Dual Series High Voltage SwitchingSwitching DiodeMAXIMUM RATINGS - PNP TRANSISTORRating Symbol Value Unit6 5 4Collector-E

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