All IGBT. MPMB50B120RH Datasheet

 

MPMB50B120RH Datasheet and Replacement


   Type Designator: MPMB50B120RH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 85 nS
   Coesⓘ - Output Capacitance, typ: 370 pF
   Qg ⓘ - Total Gate Charge, typ: 220 nC
   Package: 7DM1
 

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MPMB50B120RH Datasheet (PDF)

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MPMB50B120RH

MPMB50B120RH NPT & Rugged Type 1200V IGBT Module General Description Features BV = 1200V MagnaChips IGBT Module 7DM-1 package CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10us at TC=100 switching noise in high frequency power Isolation Type Pac

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: APT75GN120B2G | KGT30N135KDH | PSTG75HST12

Keywords - MPMB50B120RH transistor datasheet

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