TGAN60N60FD PDF and Equivalents Search

 

TGAN60N60FD Specs and Replacement

Type Designator: TGAN60N60FD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 347 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 125 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: TO3PN

 TGAN60N60FD Substitution

- IGBT ⓘ Cross-Reference Search

 

TGAN60N60FD datasheet

 ..1. Size:1102K  trinnotech
 tgan60n60fd.pdf pdf_icon

TGAN60N60FD

TGAN60N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft Switching Application, UPS, Welder, Inverter Device Package Marking Remark TGAN60N60FD TO-3PN TG... See More ⇒

 4.1. Size:967K  trinnotech
 tgan60n60f2ds.pdf pdf_icon

TGAN60N60FD

TGAN60N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHS Absolute Maxim... See More ⇒

 6.1. Size:987K  trinnotech
 tgan60n65f2dr.pdf pdf_icon

TGAN60N60FD

TGAN60N65F2DR Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N... See More ⇒

 6.2. Size:818K  trinnotech
 tgan60n65f2ds.pdf pdf_icon

TGAN60N60FD

TGAN60N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN60N65F2DS TO-3PN ... See More ⇒

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Specs: APT43GA90S , APT43GA90SD30 , VS-EMG050J60N , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , NGD8201N , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , APT54GA60SD30 .

History: NGTB35N65FL2WG | SRE40N065FSUR

Keywords - TGAN60N60FD transistor spec

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