All IGBT. TGAN60N60FD Datasheet

 

TGAN60N60FD Datasheet and Replacement


   Type Designator: TGAN60N60FD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 347 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 125 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: TO3PN
      - IGBT Cross-Reference

 

TGAN60N60FD Datasheet (PDF)

 ..1. Size:1102K  trinnotech
 tgan60n60fd.pdf pdf_icon

TGAN60N60FD

TGAN60N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :Induction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN60N60FD TO-3PN TG

 4.1. Size:967K  trinnotech
 tgan60n60f2ds.pdf pdf_icon

TGAN60N60FD

TGAN60N60F2DSField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHSAbsolute Maxim

 6.1. Size:987K  trinnotech
 tgan60n65f2dr.pdf pdf_icon

TGAN60N60FD

TGAN60N65F2DRField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN60N

 6.2. Size:818K  trinnotech
 tgan60n65f2ds.pdf pdf_icon

TGAN60N60FD

TGAN60N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN60N65F2DS TO-3PN

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Datasheet: APT43GA90S , APT43GA90SD30 , VS-EMG050J60N , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , YGW40N65F1 , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , APT54GA60SD30 .

History: IXGK60N60C2D1

Keywords - TGAN60N60FD transistor datasheet

 TGAN60N60FD cross reference
 TGAN60N60FD equivalent finder
 TGAN60N60FD lookup
 TGAN60N60FD substitution
 TGAN60N60FD replacement

 

 
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