Справочник IGBT. TGAN60N60FD

 

TGAN60N60FD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: TGAN60N60FD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 347
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 120
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.8
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7.5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 125
   Емкость коллектора типовая (Cc), pf: 170
   Общий заряд затвора (Qg), typ, nC: 150
   Тип корпуса: TO3PN

 Аналог (замена) для TGAN60N60FD

 

 

TGAN60N60FD Datasheet (PDF)

 ..1. Size:1102K  trinnotech
 tgan60n60fd.pdf

TGAN60N60FD TGAN60N60FD

TGAN60N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :Induction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN60N60FD TO-3PN TG

 4.1. Size:967K  trinnotech
 tgan60n60f2ds.pdf

TGAN60N60FD TGAN60N60FD

TGAN60N60F2DSField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHSAbsolute Maxim

 6.1. Size:987K  trinnotech
 tgan60n65f2dr.pdf

TGAN60N60FD TGAN60N60FD

TGAN60N65F2DRField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN60N

 6.2. Size:818K  trinnotech
 tgan60n65f2ds.pdf

TGAN60N60FD TGAN60N60FD

TGAN60N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN60N65F2DS TO-3PN

Другие IGBT... APT43GA90S , APT43GA90SD30 , VS-EMG050J60N , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , TGD30N40P , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , APT54GA60SD30 .

 

 
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