TGAN60N60FD - аналоги и описание IGBT

 

TGAN60N60FD - аналоги, основные параметры, даташиты

Наименование: TGAN60N60FD

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 347 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃

tr ⓘ - Время нарастания типовое: 125 nS

Coesⓘ - Выходная емкость, типовая: 170 pF

Тип корпуса: TO3PN

 Аналог (замена) для TGAN60N60FD

- подбор ⓘ IGBT транзистора по параметрам

 

TGAN60N60FD даташит

 ..1. Size:1102K  trinnotech
tgan60n60fd.pdfpdf_icon

TGAN60N60FD

TGAN60N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft Switching Application, UPS, Welder, Inverter Device Package Marking Remark TGAN60N60FD TO-3PN TG

 4.1. Size:967K  trinnotech
tgan60n60f2ds.pdfpdf_icon

TGAN60N60FD

TGAN60N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHS Absolute Maxim

 6.1. Size:987K  trinnotech
tgan60n65f2dr.pdfpdf_icon

TGAN60N60FD

TGAN60N65F2DR Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N

 6.2. Size:818K  trinnotech
tgan60n65f2ds.pdfpdf_icon

TGAN60N60FD

TGAN60N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN60N65F2DS TO-3PN

Другие IGBT... APT43GA90S , APT43GA90SD30 , VS-EMG050J60N , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , NGD8201N , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , APT54GA60SD30 .

History: APT40GP60B2DQ2G | IRGS4620D | TSG40N120CE

 

 

 

 

↑ Back to Top
.