IXGA20N250 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXGA20N250
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 2500 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.1 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 160 nS
Coesⓘ - Выходная емкость, типовая: 53 pF
Тип корпуса: TO263
Аналог (замена) для IXGA20N250
IXGA20N250 Datasheet (PDF)
ixga20n250.pdf
Advance Technical InformationHigh Voltage IGBT VCES = 2500VIXGA20N250IC110 = 12AVCE(sat) 3.1VFor Capacitor DischargeApplicationsTO-263Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VGVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 20 VC (Tab)VGEM Transient 30 VIC25 TC = 25C 30 AG = Gate C = Coll
ixga20n250hv.pdf
Preliminary Technical InformationHigh Voltage IGBT VCES = 2500VIXGA20N250HVIC110 = 12AVCE(sat) 3.1VFor Capacitor DischargeApplicationsTO-263Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VGVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 20 VC (Tab)VGEM Transient 30 VIC25 TC = 25C 30 AG = Gate C
ixga20n120.pdf
VCES = 1200 VIXGA 20N120IGBTIC25 = 40 AIXGP 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C40 AIC90 TC = 90C20 ATO-263 AA (IXGA)ICM TC = 25C, 1 ms 80 ASSOA VGE = 15 V, T
ixga20n120a3.pdf
VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG
ixga20n100a3.pdf
Advance Technical InformationVCES = 1000VGenX3TM 1000V IXGA20N100A3IC90 = 20AIGBTs IXGP20N100A3VCE(sat) 2.3VIXGH20N100A3 Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingTO-263 (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C, RGE = 1M 1000 VVGES Continuous 20 V
ixga20n120b3.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBTIXGA20N120B3IC90 = 20AIXGP20N120B3VCE(sat) 3.1VHigh Speed Low Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsEC (TAB)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Trans
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf
VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG
ixga20n100 ixgp20n100.pdf
VCES = 1000 VIXGA 20N100IGBTIC25 = 40 AIXGP 20N100VCE(sat) = 3.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 ATO-263 AA (IXGA)SSOA VGE = 15
ixga20n100.pdf
VCES = 1000 VIXGA 20N100IGBTIC25 = 40 AIXGP 20N100VCE(sat) = 3.0 VPreliminary Data SheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C40 AIC90 TC = 90C20 AICM TC = 25C, 1 ms 80 ATO-263 AA (IXGA)SSOA VGE = 15
ixga20n120b3 ixgp20n120b3.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBTIXGA20N120B3IC90 = 20AIXGP20N120B3VCE(sat) 3.1VHigh Speed Low Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsEC (TAB)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Trans
ixga20n60b.pdf
IXGA 20N60B VCES = 600 VHiPerFASTTM IGBTIXGP 20N60B IC25 = 40 AVCE(sat)typ = 1.7 Vtfi = 100 nsPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 40 AIC90 TC = 90C 20 ATO-263 AA (IXGA)ICM TC = 25C,
ixga20n120 ixgp20n120.pdf
VCES = 1200 VIXGA 20N120IGBTIC25 = 40 AIXGP 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C40 AIC90 TC = 90C20 ATO-263 AA (IXGA)ICM TC = 25C, 1 ms 80 ASSOA VGE = 15 V, T
Другие IGBT... IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , IXBX28N300HV , IXBX50N360HV , IXCH36N250 , IXCK36N250 , RJH60F5DPQ-A0 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2