IXXH60N65B4H1 - аналоги, параметры транзистора

IXXH60N65B4H1 даташит

..1. Size:178K ixys
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Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH60N65B4H1 GenX4TM w/ Diode IC100 = 60A VCE(sat) 2.0V tfi(typ) = 72ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20 V C Tab E VGEM T

3.1. Size:167K ixys
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Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH60N65B4 GenX4TM IC110 = 60A VCE(sat) 2.0V tfi(typ) = 72ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20 V C Tab E VGEM Transient

5.1. Size:167K ixys
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Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH60N65C4 GenX4TM IC110 = 60A VCE(sat) 2.2V Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V VGEM Transient 30 V G C Ta

Другие IGBT... IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , RJH60F5DPQ-A0 , IXXH60N65C4 , IXGH10N60 , IXGH10N60A , IXGH40N60 , IXGH40N60A , IXGM40N60 , IXGM40N60A , IXGP10N60 .