Справочник IGBT. IXGH10N60

 

IXGH10N60 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXGH10N60
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 200 nS
   Coesⓘ - Выходная емкость, типовая: 100 pF
   Qgⓘ - Общий заряд затвора, typ: 50 nC
   Тип корпуса: TO247AD

 Аналог (замена) для IXGH10N60

 

 

IXGH10N60 Datasheet (PDF)

 ..1. Size:42K  ixys
 ixgh10n60.pdf

IXGH10N60 IXGH10N60

Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E

 0.1. Size:56K  ixys
 ixgp10n60-a ixga10n60-a ixgh10n60-a.pdf

IXGH10N60 IXGH10N60

Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E

 0.2. Size:42K  ixys
 ixgh10n60a.pdf

IXGH10N60 IXGH10N60

Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E

 7.1. Size:224K  ixys
 ixgh10n300.pdf

IXGH10N60 IXGH10N60

Advance Technical InformationHigh Voltage IGBT VCES = 3000VIXGH10N300IC90 = 10A VCE(sat) 3.5V For Capacitor DischargeApplicationsTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VG (TAB)VGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C 18 AG = Gate C

 7.2. Size:413K  ixys
 ixgh10n100au1 ixgh10n100u1.pdf

IXGH10N60 IXGH10N60

 7.3. Size:34K  ixys
 ixgh10n100a.pdf

IXGH10N60 IXGH10N60

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 VHigh speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C20 AG = Gate, C = Collector,IC90 TC = 90C10 AE = Emitter, TAB = Col

 7.4. Size:565K  ixys
 ixgh10n170a ixgt10n170a.pdf

IXGH10N60 IXGH10N60

IXGH 10N170AVCES = 1700 VHigh VoltageIXGT 10N170AIC25 = 10 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 35 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C10 ATO-247 AD (IXGH)IC90 TC = 90C5 AICM

 7.5. Size:562K  ixys
 ixgh10n170a.pdf

IXGH10N60 IXGH10N60

IXGH 10N170AVCES = 1700 VHigh VoltageIXGT 10N170AIC25 = 10 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 35 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C10 ATO-247 AD (IXGH)IC90 TC = 90C5 AICM

 7.6. Size:34K  ixys
 ixgh10n100.pdf

IXGH10N60 IXGH10N60

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 VHigh speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C20 AG = Gate, C = Collector,IC90 TC = 90C10 AE = Emitter, TAB = Col

 7.7. Size:187K  ixys
 ixgh10n170.pdf

IXGH10N60 IXGH10N60

VCES = 1700VHigh Voltage IXGH10N170IC90 = 10AIGBT IXGT10N170VCE(sat) 4.0VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 1700 VC C (TAB)EVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transient 30 VIC25 TC = 25C 20 AGEIC90 TC = 90C 10 AC (TAB)ICM TC = 25C,

Другие IGBT... IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IRGP4062D , IXGH10N60A , IXGH40N60 , IXGH40N60A , IXGM40N60 , IXGM40N60A , IXGP10N60 , IXGP10N60A , IXXH80N65B4 .

 

 
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