IXGH10N60A - аналоги и описание IGBT

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E

Advance Technical Information High Voltage IGBT VCES = 3000V IXGH10N300 IC90 = 10A VCE(sat) 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G (TAB) VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C 18 A G = Gate C

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 V High speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C20 A G = Gate, C = Collector, IC90 TC = 90 C10 A E = Emitter, TAB = Col

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 V High speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C20 A G = Gate, C = Collector, IC90 TC = 90 C10 A E = Emitter, TAB = Col

VCES = 1700V High Voltage IXGH10N170 IC90 = 10A IGBT IXGT10N170 VCE(sat) 4.0V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 1700 V C C (TAB) E VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C 20 A G E IC90 TC = 90 C 10 A C (TAB) ICM TC = 25 C,