Справочник IGBT. CM100MXA-24S

 

CM100MXA-24S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: CM100MXA-24S
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 750 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.6 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 200 nS
   Coesⓘ - Выходная емкость, типовая: 2000 pF
   Qgⓘ - Общий заряд затвора, typ: 233 nC
   Тип корпуса: MODULE

 Аналог (замена) для CM100MXA-24S

 

 

CM100MXA-24S Datasheet (PDF)

 ..1. Size:496K  1
cm100mxa-24s.pdf

CM100MXA-24S

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cm1000dxl-24s.pdf

CM100MXA-24S
CM100MXA-24S

CM1000DXL-24SPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.comNX-Series Module1000 Amperes/1200 VoltsABG CDJEKL FAM AMK AHAMAT AU AU AV AUAJAL63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41LAEYMX(4 PLACES)40 AMAK391R Q383736DETAIL "A"ZS35T342

 9.2. Size:182K  1
cm100dy-24nf.pdf

CM100MXA-24S

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cm100rx-12a.pdf

CM100MXA-24S

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cm100du-12f.pdf

CM100MXA-24S
CM100MXA-24S

CM100DU-12FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD100 Amperes/600 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sis

 9.5. Size:192K  1
cm100tl-24nf.pdf

CM100MXA-24S

 9.6. Size:163K  1
cm100du-24f.pdf

CM100MXA-24S
CM100MXA-24S

CM100DU-24FPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD100 Amperes/1200 VoltsAN DP - NUTS (3 TYP)TC MEASURED POINTYEC2E1 E2 C1WQ (2 FPLACES)X GBFDescription:Powerex IGBTMOD Modules M K K Jare designed for use in switching Rapplications. Each module con-H (4PLACES)sis

 9.7. Size:541K  1
cm100rl-12nf.pdf

CM100MXA-24S
CM100MXA-24S

CM100RL-12NFPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD + Brakewww.pwrx.comNF-Series Module100 Amperes/600 VoltsE AF DM G H J JKN8 1 1 1 1C BCN UP VP WPP NAA ABKB U V WQUPLT Description:K KK KPowerex IGBTMOD Modules S R R Rare designed for use in switching applications. Each module K

 9.8. Size:188K  1
cm100dy-24a.pdf

CM100MXA-24S

 9.9. Size:481K  1
cm100rx-24s.pdf

CM100MXA-24S

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cm100tx-24s.pdf

CM100MXA-24S

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cm100tx-24s1.pdf

CM100MXA-24S

 9.12. Size:193K  1
cm100tl-12nf.pdf

CM100MXA-24S

 9.13. Size:197K  1
cm100rl-24nf.pdf

CM100MXA-24S

 9.14. Size:127K  1
cm100tu-24f.pdf

CM100MXA-24S
CM100MXA-24S

CM100TU-24FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD100 Amperes/1200 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGU V WPOINT POINTDescription:J JPowerex IGBTMOD ModulesLLLare designe

 9.15. Size:539K  1
cm1000duc-34sa.pdf

CM100MXA-24S

 9.16. Size:127K  1
cm100tu-12f.pdf

CM100MXA-24S
CM100MXA-24S

CM100TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD100 Amperes/600 VoltsJT (4 TYP.)S - NUTS (5 TYP) KKRCMN PPGUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesL N L N Lare desig

 9.17. Size:431K  1
cm100du-24nfh.pdf

CM100MXA-24S
CM100MXA-24S

CM100DU-24NFHPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTwww.pwrx.comNFH-Series Module100 Amperes/1200 VoltsTC MEASUREMENT POINTAN DM K KFEC2E1 E2 C1SB H GFRJP - NUTS (3 TYP) UQ - (2 TYP)Description:Powerex IGBT Modules are designed for use in high frequency applications; 30 kHz W W W Wfor hard switchi

 9.18. Size:1065K  1
cm100rx-24s1.pdf

CM100MXA-24S

 9.19. Size:127K  jdsemi
cm100n03.pdf

CM100MXA-24S
CM100MXA-24S

RCM100N03 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 30V N-Channel Trench-MOS RoHS 1 USP 2 3

 9.20. Size:452K  sensitron
scm1001.pdf

CM100MXA-24S
CM100MXA-24S

SENSITRON SCM1001 SEMICONDUCTOR Technical Data DATASHEET 5284, Rev. B Three-Phase IGBT BRIDGE with BRAKE IGBT Three-Phase Input BRIDGE with INRUSH SCR DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE UPPER & LOWER REGENERATIVE BRAKE IGBT SWITCHES USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES 1200 VOLT, 25 AMP BRAKE IGBT 12

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