CM400C1Y-24S datasheet, аналоги, основные параметры
Наименование: CM400C1Y-24S 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 2670 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 350 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
tr ⓘ - Время нарастания типовое: 200 nS
Coesⓘ - Выходная емкость, типовая: 8000 pF
Тип корпуса: MODULE
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Аналог (замена) для CM400C1Y-24S
- подбор ⓘ IGBT транзистора по параметрам
CM400C1Y-24S даташит
9.2. Size:90K 1
cm400hu-24f.pdf 
CM400HU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD 400 Amperes/1200 Volts M (2 TYP.) N (2 TYP) A D G C E F P G E CM C L E B Description Powerex IGBTMOD Modules H J K R are designed for use in switching TC MEASURING L (4 TYP) applications. Each module consists POINT of one IGBT Tran
9.3. Size:45K 1
cm400dy-66h.pdf 
MITSUBISHI HVIGBT MODULES CM400DY-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM400DY-66H IC...................................................................400A VCES ....................................................... 3300V Insulated Type 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Ind
9.4. Size:197K 1
cm400hg-66h.pdf 
MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM400HG-66H IC ..................................................................400 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC Baseplate AP
9.5. Size:64K 1
cm400hb-90h.pdf 
CM400HB-90H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD HVIGBT 400 Amperes/4500 Volts A D V NUTS LL (4 TYP) N S Y C C P G F E B E E CM Q Description C E G Powerex IGBTMOD Modules R are designed for use in switching applications. Each module consists U NUTS of one IGBT Transistor with a (3 TYP) H T W rev
9.6. Size:164K 1
cm400dy-50h.pdf 
MITSUBISHI HVIGBT MODULES CM400DY-50H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM400DY-50H IC...................................................................400A VCES ....................................................... 2500V Insulated Type 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Ind
9.7. Size:191K 1
cm400du-12nfh.pdf 
MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE CM400DU-12NFH IC ...................................................................400A VCES ............................................................600V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUT
9.8. Size:187K 1
cm400du-24nfh.pdf 
MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE CM400DU-24NFH IC ...................................................................400A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTL
9.9. Size:416K 1
cm400dy-24a.pdf 
CM400DY-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD A-Series Module 400 Amperes/1200 Volts A F F W G2 G E2 B H J E N E1 G G1 C2E1 E2 C1 L K K K (4 PLACES) Description M NUTS D (3 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK applications. Each module consists P P P Q Q U WIDTH
9.10. Size:51K 1
cm400dy-12h.pdf 
MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 J C D P Description K Mitsubishi IGBT Modules are de- R Q - M6 THD signed for use in switching applica- N - DIA. (3 TYP.) (4 TYP.) tions. Each module consists of two IGBTs in a half-bridge configuration TAB#110 t=0.5 M L with each transistor having a re- M verse-connect
9.12. Size:68K 1
cm400du-5f.pdf 
CM400DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts TC MEASURE POINT A D F T - (4 TYP.) H G2 E2 C L J B E E1 CM G1 H U C2E1 E2 C1 G S - NUTS Q Q P N Description (3 TYP) Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists
9.15. Size:36K powerex
cm400ha-28h.pdf 
CM400HA-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD H-Series Module 400 Amperes/1400 Volts A B H J F K Q - THD (2 TYP.) C D J Description Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists P - DIA. M R - THD (4 TYP.) of one IGBT Transistor in a single L (2 TYP.) co
9.16. Size:38K powerex
cm400ha-24h.pdf 
CM400HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD H-Series Module 400 Amperes/1200 Volts A B H J F K Q - THD (2 TYP.) C D J Description Powerex IGBTMOD Modules are designed for use in switching P - DIA. M applications. Each module consists R - THD (4 TYP.) of one IGBT Transistor in a single L (2 TYP.) con
Другие IGBT... CM300DY-12NF, CM300DY-24A, CM300DY-24H, CM300DY-24NF, CM300DY-24S, CM300EXS-24S, CM30MD-12H, CM35MXA-24S, GT30F126, CM400DU-12NFH, CM400DU-24NFH, CM400DU-5F, CM400DX-12A, CM400DY-12H, CM400DY-12NF, CM400DY-24A, CM400DY-24NF
