CM400HU-24FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD400 Amperes/1200 VoltsM (2 TYP.)N (2 TYP)ADGCEFPGECMCLEBDescription:Powerex IGBTMOD ModulesH J K Rare designed for use in switchingTC MEASURINGL (4 TYP)applications. Each module consistsPOINTof one IGBT Tran

MITSUBISHI HVIGBT MODULESCM400DY-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-66H IC...................................................................400A VCES ....................................................... 3300V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind

MITSUBISHI HVIGBT MODULESCM400HG-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400HG-66H IC ..................................................................400 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC BaseplateAP

CM400HB-90HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Single IGBTMODHVIGBT400 Amperes/4500 VoltsADV NUTSLL(4 TYP)NSYC CP GFE BE ECMQDescription:CE GPowerex IGBTMOD ModulesRare designed for use in switchingapplications. Each module consistsU NUTSof one IGBT Transistor with a(3 TYP) HTW rev

MITSUBISHI HVIGBT MODULESCM400DY-50HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-50H IC...................................................................400A VCES ....................................................... 2500V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind

MITSUBISHI IGBT MODULESCM400DU-12NFHHIGH POWER SWITCHING USECM400DU-12NFHIC ...................................................................400AVCES ............................................................600VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUT

MITSUBISHI IGBT MODULESCM400DU-24NFHHIGH POWER SWITCHING USECM400DU-24NFHIC ...................................................................400AVCES ......................................................... 1200VInsulated Type2-elements in a packAPPLICATIONHigh frequency switching use (30kHz to 60kHz).Gradient amplifier, Induction heating, power supply, etc.OUTL

CM400DY-24APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Dual IGBTMODA-Series Module400 Amperes/1200 VoltsAF FWG2GE2B HJE NE1GG1C2E1 E2 C1LK K K(4 PLACES) Description:M NUTS D(3 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK applications. Each module consists P P PQ Q U WIDTH

MITSUBISHI IGBT MODULESCM400DY-12HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDsigned for use in switching applica-N - DIA.(3 TYP.)(4 TYP.)tions. Each module consists of twoIGBTs in a half-bridge configurationTAB#110 t=0.5ML with each transistor having a re-Mverse-connect

CM400DU-5FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD400 Amperes/250 VoltsTC MEASURE POINTADFT - (4 TYP.)HG2E2CL JB EE1CMG1HUC2E1 E2 C1GS - NUTS Q Q P NDescription:(3 TYP)Powerex IGBTMOD Modulesare designed for use in switchingapplications. Each module consists

CM400HA-28HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Single IGBTMODH-Series Module400 Amperes/1400 VoltsABH J F KQ - THD(2 TYP.)C DJDescription:Powerex IGBTMOD Modulesare designed for use in switchingapplications. Each module consistsP - DIA.M R - THD (4 TYP.) of one IGBT Transistor in a singleL(2 TYP.)co

CM400HA-24HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Single IGBTMODH-Series Module400 Amperes/1200 VoltsABH J F KQ - THD(2 TYP.)C DJDescription:Powerex IGBTMOD Modulesare designed for use in switchingP - DIA.M applications. Each module consistsR - THD (4 TYP.)of one IGBT Transistor in a singleL(2 TYP.)con