CM800DY-24S - аналоги, основные параметры, даташиты
Наименование: CM800DY-24S
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ -
Максимальная рассеиваемая мощность: 5355 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 790 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
tr ⓘ - Время нарастания типовое: 200 nS
Coesⓘ - Выходная емкость,
типовая: 16000 pF
Тип корпуса: MODULE
Аналог (замена) для CM800DY-24S
- подбор ⓘ IGBT транзистора по параметрам
CM800DY-24S даташит
8.1. Size:204K 1
cm800dzb-34n.pdf 
MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZB-34N IC ...................................................................800A VCES ....................................................... 1700V Insulated Type 2-element in a Pack AISiC Baseplate T
8.2. Size:762K 1
cm800dz-34h.pdf 
CM800DZ-34H HIGH POWER SWITHCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800DZ-34H I 800 A C V 1700 V CES
9.1. Size:51K 1
cm800e2c-66h.pdf 
MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2C-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) AISiC base plate APPLICA
9.2. Size:50K 1
cm800e2z-66h.pdf 
MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2Z-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) APPLICATION DC choppers,
9.3. Size:47K 1
cm800hb-50h.pdf 
MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HB-50H IC...................................................................800A VCES ....................................................... 2500V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC ch
9.5. Size:178K 1
cm800hc-66h.pdf 
MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HC-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction
9.6. Size:47K 1
cm800hb-66h.pdf 
MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HB-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC ch
9.7. Size:42K 1
cm800ha-66h.pdf 
MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HA-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Indu
9.8. Size:182K 1
cm800e6c-66h.pdf 
MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E6C-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate APPLICAT
9.9. Size:538K toshiba
tpcm8001-h.pdf 
TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A 8 5 Portable-Equipment Applications 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate char
9.11. Size:199K toshiba
tpcm8006.pdf 
TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit mm Portable Equipment Applications 0.25 0.05 0.8 0.05 M A 8 5 Small footprint due to a small and thin package 0.2 0 0.2 Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer adm
9.12. Size:238K toshiba
tpcm8002-h.pdf 
TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.05 0.25 0.8 0.05 M A 5 Portable Equipment Applications 8 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 9.3 nC
9.13. Size:218K toshiba
tpcm8004-h.pdf 
TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A Portable Equipment Applications 8 5 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 5.0 nC (ty
Другие IGBT... CM75RL-24NF, CM75RX-24S, CM75RX-34SA, CM75TL-12NF, CM75TL-24NF, CM75TU-12F, CM75TU-24F, CM75TX-24S, TGAN40N60FD, CM800DZ-34H, CM800DZB-34N, CM800E2C-66H, CM800E2Z-66H, CM800E6C-66H, CM800HA-50H, CM800HA-66H, CM800HB-50H
