Справочник IGBT. IKW50N60DTP

 

IKW50N60DTP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IKW50N60DTP
   Тип транзистора: IGBT + Diode
   Маркировка: K50DDTP
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 319.2 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 109 pF
   Qgⓘ - Общий заряд затвора, typ: 249 nC
   Тип корпуса: TO247

 Аналог (замена) для IKW50N60DTP

 

 

IKW50N60DTP Datasheet (PDF)

 ..1. Size:1551K  infineon
 ikw50n60dtp.pdf

IKW50N60DTP IKW50N60DTP

IGBTTRENCHSTOP Performance technology copacked with RAPID 1fast anti-parallel diodeIKW50N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW50N60DTPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-off losse

 6.1. Size:2179K  infineon
 ikw50n60h3.pdf

IKW50N60DTP IKW50N60DTP

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW50N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 6.2. Size:1971K  infineon
 aikw50n60ct.pdf

IKW50N60DTP IKW50N60DTP

AIKW50N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

 6.3. Size:1642K  infineon
 ikw50n60h3 rev1 1g.pdf

IKW50N60DTP IKW50N60DTP

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW50N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat

 6.4. Size:412K  infineon
 ikw50n60trev2 4g.pdf

IKW50N60DTP IKW50N60DTP

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Field

 6.5. Size:416K  infineon
 ikw50n60t.pdf

IKW50N60DTP IKW50N60DTP

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technolog

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