IXGK80N60AU1 - аналоги, параметры транзистора

IXGK80N60AU1 даташит

4.1. Size:40K ixys
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IXGK80N60A Preliminary data VCES = 600 V IXGK80N60A HiPerFASTTM IGBT IC25 = 80 A VCE(sat) = 2.7 V tfi = 275 ns Symbol Test Conditions Maximum Ratings TO-264 AA VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C, limited by leads 80 A IC90 TC = 90 C80 A G = Gate C = Co

9.1. Size:217K ixys
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Advance Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120B3 IC110 = 82A IGBTs IXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (TAB) E E VGES Continuous 20 V VGEM Transient

9.2. Size:179K ixys
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Preliminary Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120A3 IC110 = 82A IGBTs IXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V E E VGES Continuous 20 V VGEM Transient 3

Другие IGBT... IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , FGL60N100BNTD , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , IXGN200N60 , IXGN200N60A , IXGN200N60B , IXGN50N60B .