IXGN50N60B - аналоги, параметры транзистора - Справочник транзисторов

IXGN50N60B даташит

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HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.3 V tfi(typ) = 120ns Preliminary data sheet E Symbol Test Conditions Maximum Ratings SOT-227B miniBLOC E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C75 A C IC90 TC = 90 C50 A G = Gate, C = Collector

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ixgn50n60bd3 ixgn50n60bd2.pdf pdf_icon

IXGN 50N60BD2 VCES = 600 V HiPerFASTTM IGBT IXGN 50N60BD3 IC25 = 75 A with HiPerFRED VCE(sat) = 2.5 V tfi = 150 ns Buck & boost configurations ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V 4 IC25 TC = 25 C75 A 3 IC90

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ixgn50n120c3h1.pdf pdf_icon

Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN50N120C3H1 IC110 = 50A IGBT w/ Diode VCE(sat) 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V E

Другие IGBT... IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , IXGN200N60 , IXGN200N60A , IXGN200N60B , XNF15N60T , IXGN50N60BD2 , IXGN50N60BD3 , IXGN60N60 , IXGP12N100 , IXGP12N100A , IXGP12N100AU1 , IXGP12N100U1 , IXGP12N60C .