Справочник MOSFET. STP12PF06

 

STP12PF06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STP12PF06
   Маркировка: P12PF06
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: TO220

 Аналог (замена) для STP12PF06

 

 

STP12PF06 Datasheet (PDF)

 ..1. Size:262K  st
stp12pf06.pdf

STP12PF06
STP12PF06

STP12PF06P - CHANNEL 60V - 0.18 - 12A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP12PF06 60 V

 ..2. Size:266K  st
stp12pf06 stf12pf06.pdf

STP12PF06
STP12PF06

STP12PF06STF12PF06P-CHANNEL 60V - 0.18 - 12A TO-220/TO-220FPSTripFET II POWER MOSFETTable 1: General Features Figure 1:PackageTYPE VDSS RDS(on) IDSTP12PF06 60 V

 9.1. Size:391K  st
stp12n60m2.pdf

STP12PF06
STP12PF06

STP12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications F

 9.2. Size:581K  st
std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf

STP12PF06
STP12PF06

STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5

 9.3. Size:740K  st
stp120n4f6.pdf

STP12PF06
STP12PF06

STP120N4F6N-channel 40 V, 3.8 m , 80 A, TO-220STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STP120N4F6 40 V 4.3 m80 A (1)1. Current limited by package3 Standard threshold drive21 100% avalanche testedTO-220Application Switching applications Automotive Figure 1. Internal schematic diagramDescriptionThis devi

 9.4. Size:478K  st
stb12nm50fdt4 stp12nm50fd stw14nm50fd.pdf

STP12PF06
STP12PF06

STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V

 9.5. Size:586K  st
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf

STP12PF06
STP12PF06

STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5

 9.6. Size:542K  st
stp12nm50 stp12nm50fp stb12nm50 stb12nm50-1.pdf

STP12PF06
STP12PF06

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

 9.7. Size:806K  st
sth12n120k5-2 stp12n120k5 .pdf

STP12PF06
STP12PF06

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOTSTH12N120K5-2 STP12N120K5 2PAK-2H TO-2201200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m

 9.8. Size:530K  st
stb120nh03l sti120nh03l stp120nh03l.pdf

STP12PF06
STP12PF06

STB120NH03L - STI120NH03LSTP120NH03LN-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAKSTripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTB120NH03L 30V

 9.9. Size:821K  st
stb12n120k5 stfw12n120k5 stp12n120k5 stw12n120k5.pdf

STP12PF06
STP12PF06

STB12N120K5, STFW12N120K5STP12N120K5, STW12N120K5N-channel 1200 V, 0.58 , 12 A DPAK, TO-3PF, TO-220, TO-247Zener-protected SuperMESH 5 Power MOSFETPreliminary dataFeaturesTAB111RDS(on) Order codes VDSS ID PW2max.3312STB12N120K5 250 W1DPAKTO-3PFSTFW12N120K5 63 W1200 V

 9.10. Size:526K  st
stb12nk80z stp12nk80z stw12nk80z.pdf

STP12PF06
STP12PF06

STB12NK80ZSTP12NK80Z - STW12NK80ZN-channel 800V - 0.65 - 10.5A - TO-220 - D2PAK - TO-247Zener - Protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID PW(@Tjmax)STB12NK80Z 800V

 9.11. Size:286K  st
stp12nk30z.pdf

STP12PF06
STP12PF06

STP12NK30ZN-CHANNEL 300V - 0.36 - 9A- TO-220Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID (1) Pw (1)STP12NK30Z 300 V

 9.12. Size:618K  st
stp12n50m2.pdf

STP12PF06
STP12PF06

STP12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDTABSTP12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation3 Low gate input resistance21 100% avalanche testedTO-220 Zener-protectedAppl

 9.13. Size:154K  st
stp12nb30.pdf

STP12PF06
STP12PF06

STP12NB30STP12NB30FPN-CHANNEL 300V - 0.34 - 12A TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP12NB30 300 V

 9.14. Size:618K  st
stb12nm50t4 stp12nm50 stp12nm50fp.pdf

STP12PF06
STP12PF06

STB12NM50T4, STP12NM50, STP12NM50FPDatasheetN-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packagesFeaturesTABVDS RDS(on) max. IDOrder codes312D PAK3STB12NM50T421TO-220FPTAB STP12NM50 500 V 350 m 12 ASTP12NM50FP32 100% avalanche tested1TO-220 Low input capacitance and gate charge Low gate inp

 9.15. Size:306K  st
stp120nf04.pdf

STP12PF06
STP12PF06

STP120NF04N-channel 40V - 0.0047 - 120A TO-220STripFET II MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP120NF04 40V

 9.16. Size:535K  st
stb120nh03l sti120nh03l stp120nh03l.pdf

STP12PF06
STP12PF06

STB120NH03L - STI120NH03LSTP120NH03LN-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAKSTripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTB120NH03L 30V

 9.17. Size:541K  st
stb12nm50t4 stp12nm50fp.pdf

STP12PF06
STP12PF06

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

 9.18. Size:1040K  st
std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf

STP12PF06
STP12PF06

STD12N65M5, STF12N65M5, STI12N65M5STP12N65M5, STU12N65M5N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFETDPAK, I2PAK, TO-220FP, TO-220, IPAKFeaturesVDSS @ RDS(on) Type ID PTOT3TJmax max231 21STD12N65M5 8.5 A 70 WIPAK TO-220STF12N65M5 8.5 A(1) 25 W3STI12N65M5 710 V

 9.19. Size:1031K  st
stb120nf10t4 stp120nf10 stw120nf10.pdf

STP12PF06
STP12PF06

STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 m typ., 110 A STripFET II Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data TABFeatures Order code V R max. I DS DS(on) DSTB120NF10T4 STP120NF10 100 V 10.5 m 110 A D2PAKTAB STW120NF10 Exceptional dv/dt capability 100% avalanche tested 3 Low gate charge 3

 9.20. Size:940K  st
stp120nf10 stb120nf10 stf120nf10 stw120nf10.pdf

STP12PF06
STP12PF06

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

 9.21. Size:615K  st
stb12nm60n-1 stb12nm60n stf12nm60n stp12nm60n stw12nm60n.pdf

STP12PF06
STP12PF06

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V

 9.22. Size:940K  st
stp120nf10 stb120nf10.pdf

STP12PF06
STP12PF06

STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V

 9.23. Size:618K  st
stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf

STP12PF06
STP12PF06

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V

 9.24. Size:483K  st
stb12nm50fd stp12nm50fd-fp stw14nm50fd.pdf

STP12PF06
STP12PF06

STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V

 9.25. Size:918K  st
std120n4f6 stp120n4f6 stb120n4f6.pdf

STP12PF06
STP12PF06

STB120N4F6STD120N4F6, STP120N4F6N-channel 40 V, 4 m , 80 A, DPAK, DPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STB120N4F6 40 V 4 m 80 A 3STD120N4F6 40 V 4 m 80 A311STP120N4F6 40 V 4.3 m 80 ADPAKDPAK Standard threshold drive 100% avalanche tested 321TO-220Application Switching applications

 9.26. Size:590K  st
stw12n120k5 stwa12n120k5 sth12n120k5 stp12n120k5.pdf

STP12PF06
STP12PF06

STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 typ.,12 A MDmesh K5 Power MOSFETs in HPAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V R max. I P DS DS(on) D TOTSTH12N120K5-2 STP12N120K5 2PAK-2H TO-2201200 V 0.69 12 A 250 W STW12N120K5 STWA12N120K5 Worldwide best FOM (figure of m

 9.27. Size:835K  st
stp12nk60z stf12nk60z stw12nk60z.pdf

STP12PF06
STP12PF06

STP12NK60ZSTF12NK60Z, STW12NK60ZN-channel 650 V @Tjmax, 0.53 , 10 A TO-220, TO-220FP, TO-247Zener-protected SuperMESH Power MOSFETFeaturesVDSS RDS(on) Type ID PW(@Tjmax) max332STP12NK60Z 650 V

 9.28. Size:390K  st
stw120nf10 stp120nf10 stb120nf10.pdf

STP12PF06
STP12PF06

STP120NF10 - STB120NF10STW120NF10N-channel 100V - 0.009 - 110A - TO-247 - TO-220 - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTW120NF10 100V

 9.29. Size:221K  inchange semiconductor
stp12nm50fp.pdf

STP12PF06
STP12PF06

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP12NM50FPFEATURES Drain-source on-resistance:RDS(on) 0.35@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for increasing power density of high voltage convertersallowing system miniaturization and

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