STP80NF06. Аналоги и основные параметры
Наименование производителя: STP80NF06
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 800 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: TO220
Аналог (замена) для STP80NF06
- подборⓘ MOSFET транзистора по параметрам
STP80NF06 даташит
..1. Size:308K st
stp80nf06 stb80nf06 stw80nf06.pdf 
STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS(on) ID STB80NF06 60V
6.1. Size:360K st
stp80nf03l-04.pdf 
STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF03L-04/-1 30 V
6.2. Size:209K st
stp80nf03l-04 stp80nf03l.pdf 
STP80NF03L N-CHANNEL 30V - 0.004 - 80ATO-220 STripFET II MOSFET TYPE VDSS RDS(on) ID STP80NF03L 30 V
7.2. Size:232K st
stp80nf10fp.pdf 
STP80NF10FP N-channel 100V - 0.012 - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID(1) STP80NF10FP 100V
7.3. Size:353K st
stp80nf55.pdf 
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-08/-1 55 V
7.5. Size:579K st
stb80nf10 stp80nf10.pdf 
STB80NF10 STP80NF10 N-channel 100 V, 0.012 , 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF10 100 V
7.6. Size:440K st
stp80nf70.pdf 
STP80NF70 N-channel 68 V, 0.0082 , 98 A, TO-220 STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF70 68 V
7.7. Size:377K st
stb80nf75l stp80nf75l.pdf 
STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF75L 75 V
7.8. Size:339K st
stp80nf55l-08.pdf 
STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL RDS(on) = 0.0065 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCR
7.9. Size:362K st
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf 
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features RDS(on) Type VDSS ID max 3 STB80NF55-08T4 55 V
7.10. Size:368K st
stp80nf75l.pdf 
STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF75L 75 V
7.11. Size:334K st
stp80nf10-fp.pdf 
STP80NF10 STP80NF10FP N-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF10 100 V
7.12. Size:267K st
stp80nf12.pdf 
STP80NF12 N-channel 120 V, 0.013 , 80 A, TO-220 STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF12 120 V
7.13. Size:437K st
stb80nf55-06-1 stb80nf55-06t4 stp80nf55-06fp.pdf 
STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V
7.14. Size:195K st
stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf 
STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL RDS(on) = 0.0065 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESC
7.15. Size:36K st
stp80nf55-07.pdf 
STP80NF55-07 N - CHANNEL 55V - 0.0055 - 80A - TO-220 STripFET POWER MOSFET TARGET DATA TYPE VDSS RDS(on) ID STP80NF55-07 55 V
7.16. Size:206K inchange semiconductor
stp80nf55-06.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP80NF55-06 FEATURES Typical R (on)=0.005 DS Excellent switching performance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenoid and relay drivers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T
7.17. Size:261K inchange semiconductor
stp80nf12.pdf 
isc N-Channel MOSFET Transistor STP80NF12 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
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