BSZ067N06LS3G - параметры транзистора MOSFET, его аналоги, datasheet

BSZ067N06LS3G Datasheet (PDF)

..1. Size:455K infineon
bsz067n06ls3 bsz067n06ls3g.pdf pdf_icon

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9.1. Size:657K infineon
bsz065n03ls.pdf pdf_icon

For BSZ065N03LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 6.5 mW Very low FOMQOSS for High Frequency SMPSVGS=4.5 V 8.6 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 V PG-TSDSON-8 (fu

9.2. Size:691K infineon
bsz068n06ns.pdf pdf_icon

TypeBSZ068N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 6.8 mW Superior thermal resistanceID 40 A N-channelQOSS nC 19 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 17 Pb-free lead plating; RoHS compliantPG-TSD

9.3. Size:1511K infineon
bsz063n04ls6.pdf pdf_icon

BSZ063N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord