Type IPA093N06N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 9.3 mW Optimized technology for DC/DC convertersID 43 A Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to J

pe # ! ! #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 4 DQ H35>5?B=1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA093N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING