IPA093N06N3G - аналоги, параметры транзистора

IPA093N06N3G даташит

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Type IPA093N06N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 9.3 mW Optimized technology for DC/DC converters ID 43 A Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to J

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA093N06N3 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

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