IPB50N10S3L-16 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPB50N10S3L-16
Маркировка: 3N10L16
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 49 nC
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 730 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0154 Ohm
Тип корпуса: TO263
Аналог (замена) для IPB50N10S3L-16
IPB50N10S3L-16 Datasheet (PDF)
ipb50n10s3l-16 ipi50n10s3l-16 ipp50n10s3l-16 ipp50n10s3l ipb50n10s3l ipi50n10s3l-16.pdf
IPB50N10S3L-16IPI50N10S3L-16, IPP50N10S3L-16OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 15.4mDS(on),max I 50 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval
ipb50n12s3l-15 ipi50n12s3l-15 ipp50n12s3l-15.pdf
IPB50N12S3L-15IPI50N12S3L-15, IPP50N12S3L-15OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 15.4 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temper
ipb50cn10ng ipd49cn10ng ipi50cn10ng ipp50cn10ng.pdf
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ipb50r199cp.pdf
Isc N-Channel MOSFET Transistor IPB50R199CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb50r299cp.pdf
Isc N-Channel MOSFET Transistor IPB50R299CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb50r140cp.pdf
Isc N-Channel MOSFET Transistor IPB50R140CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb50r250cp.pdf
Isc N-Channel MOSFET Transistor IPB50R250CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918