IPB016N06L3G - описание и поиск аналогов

 ..1. Size:660K  infineon
 ipb016n06l3 ipb016n06l3g.pdf 

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 9.1. Size:611K  infineon
 ipb010n06n.pdf 

IPB010N06N OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 1.0 mW 100% avalanche tested ID 180 A Superior thermal resistance Qoss 228 nC N-channel, normal level QG(0V..10V) 208 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-f

 9.2. Size:1149K  infineon
 ipb017n08n5.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB017N08N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB017N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R

 9.3. Size:670K  infineon
 ipp015n04n ipb015n04n.pdf 

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 9.4. Size:605K  infineon
 ipb014n06n.pdf 

Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for synchronous rectification VDS 60 V 100% avalanche tested RDS(on),max 1.4 mW Superior thermal resistance ID 180 A N-channel, normal level QOSS nC 119 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant

 9.5. Size:440K  infineon
 ipb015n04l.pdf 

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 9.6. Size:2346K  infineon
 ipb017n10n5.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPB017N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPB017N10N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Excellent gate charge x R product (FOM) DS(on) Very low

 9.7. Size:670K  infineon
 ipp015n04n6 ipb015n04n6.pdf 

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 9.8. Size:2348K  infineon
 ipb015n08n5.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB015N08N5 D -PAK 7pin 1 Description Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate ch

 9.9. Size:673K  infineon
 ipp015n04ng ipb015n04ng.pdf 

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 9.10. Size:1072K  infineon
 ipb019n08n5.pdf 

IPB019N08N5 MOSFET D -PAK 7pin OptiMOS 5 Power-Transistor, 80 V Features Ideal for high frequency switching and sync. rec. tab Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 100% avalanche tested 7 Pb-free plating; RoHS compliant Industrial qual

 9.11. Size:443K  infineon
 ipb015n04lg ipb015n04l .pdf 

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 9.12. Size:499K  infineon
 ipb011n04l.pdf 

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 9.13. Size:541K  infineon
 ipb019n06l3 ipb019n06l3g.pdf 

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 9.14. Size:1097K  infineon
 ipb017n10n5lf.pdf 

IPB017N10N5LF MOSFET D -PAK 7pin OptiMOSTM 5 Linear FET, 100 V Features Ideal for hot-swap and e-fuse applications tab Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 1 100% avalanche tested Pb-free plating; RoHS compliant 7 Qualified according to JEDEC1) for target applications Halogen-free according to IEC61

 9.15. Size:501K  infineon
 ipb011n04lg ipb011n04l .pdf 

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 9.16. Size:689K  infineon
 ipb019n08n3 ipb019n08n3g.pdf 

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 9.17. Size:491K  infineon
 ipb011n04n ipb011n04ng.pdf 

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 9.18. Size:661K  infineon
 ipb017n06n3 ipb017n06n3g.pdf 

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 9.19. Size:252K  inchange semiconductor
 ipb015n04l.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB015N04L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM

 9.20. Size:252K  inchange semiconductor
 ipb019n06l3.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB019N06L3 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXI

 9.21. Size:257K  inchange semiconductor
 ipb015n04n.pdf 

Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo