IPB016N06L3G Datasheet and Replacement

pe % # ! F % (>.;?6?@%>EFeaturesD R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 1 m D n) m xR ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD 1 DR I46==6?E 82E6 492C86 I AC@5F4E ) ' D n)R /6CJ =@H @? C6D:DE2?46 ,D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D

IPB010N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 1.0 mW 100% avalanche testedID 180 A Superior thermal resistanceQoss 228 nC N-channel, normal levelQG(0V..10V) 208 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-f

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPB017N08N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPB017N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

pe ## ! ! # ! ! D #:A0;53E;A@DR ' 5:3@@7> @AC?3> >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ( & D n)R .7CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 E7DE76R )4 8C77 B>3E;@9 + A", 5A?B>;3@ER "

TypeIPB014N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for synchronous rectificationVDS 60 V 100% avalanche testedRDS(on),max 1.4 mW Superior thermal resistanceID 180 A N-channel, normal levelQOSS nC 119 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant

pe $ " E $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 4 D S 4EF EI

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 100 VIPB017N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 100 VIPB017N10N5D-PAK 7pin1 DescriptionFeatures Ideal for high frequency switching and sync. rec.tab Excellent gate charge x R product (FOM)DS(on) Very low

pe ## ! ! # ! ! D #:A0;53E;A@DR ' 5:3@@7> @AC?3> >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ( & D n)R .7CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 E7DE76R )4 8C77 B>3E;@9 + A", 5A?B>;3@ER "

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB015N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB015N08N5D-PAK 7pin1 DescriptionFeatures Ideal for high frequency switching and sync. rec.tab Optimized technology for DC/DC converters Excellent gate ch

pe ## ! ! # ! ! D #:A0;53E;A@DR ' 5:3@@7> @AC?3> >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ( & D n)R .7CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 E7DE76R )4 8C77 B>3E;@9 + A", 5A?B>;3@ER "

IPB019N08N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec.tab Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 100% avalanche tested7 Pb-free plating; RoHS compliant Industrial qual

pe $ " E $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 4 D S 4EF EI

pe $ " E $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 4 D R ') - . 8AC ) , ;@9 3@6 / @;@E7CCFBE;4>7 *AH7C -FBB>J 1 1 mW - A@ ?3I 1)R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D 1 DR ( 5:3@@7>R &A9;5 >7G7>R / >EC3 >AH A@ C7D;DE3@57 D n) G O 7R G3>3@5:7 E7DE76R *4 8C77 B>3E;@9 , A"- 5A?B>;3@ER "3>A97@ 8C77 355AC6;@9 EA # Type Package Marking

pe % # ! F % (>.;?6?@%>EFeaturesD R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 1 m D n) m xR ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD 1 DR I46==6?E 82E6 492C86 I AC@5F4E ) ' D n)R /6CJ =@H @? C6D:DE2?46 ,D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D

IPB017N10N5LFMOSFETD-PAK 7pinOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applicationstab Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level1 100% avalanche tested Pb-free plating; RoHS compliant7 Qualified according to JEDEC1) for target applications Halogen-free according to IEC61

pe $ " E $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 4 D R ') - . 8AC ) , ;@9 3@6 / @;@E7CCFBE;4>7 *AH7C -FBB>J 1 1 mW - A@ ?3I 1)R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D 1 DR ( 5:3@@7>R &A9;5 >7G7>R / >EC3 >AH A@ C7D;DE3@57 D n) G O 7R G3>3@5:7 E7DE76R *4 8C77 B>3E;@9 , A"- 5A?B>;3@ER "3>A97@ 8C77 355AC6;@9 EA # Type Package Marking

# ! ! D #:A03 B53 1 m D n) m xQ ( @D9=9J54 D538>?C 1 DQ H3579>55B9>7 Q .5BI B5C9CD1>35 +D n) e #) ' ' !Q ,E@5B9?B D85B=135Q ' 381>>5?B=1

pe # ! ! D #:A0A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking

pe # ! ! D #:A03 B53 1 7 mWD n) m xQ ( @D9=9J54 D538>?F5BD5BC 1 DQ H35

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB015N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB019N06L3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI

Isc N-Channel MOSFET Transistor IPB015N04NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo