IPB023N04NG - описание и поиск аналогов

 ..1. Size:583K  infineon
 ipb023n04n ipp023n04ng ipb023n04ng.pdf 

pe IPP023N04N G IPB023N04N G 3 Power-Transistor Product Summary Features V 4 D Q &( , - 7@B ( + ?8 2?5 . ? ?D6BBEAD 3=6 )@G6B ,EAA=I R m , @? >2H 1) Q * E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C I D Q ' 492??6= Q '@B>2= =6F6= Q . =DB2 =@G @? B6C CD2?46 R D n) Q F2=2?496 D6CD65 Q )3 7B66 A=2D ?8 + @", 4@>A= 2?D Q "2=@86? 7B66 244@B5 ?8 D@ # Type #) ' '

 4.1. Size:245K  infineon
 ipp023n04n-g ipb023n04n-g.pdf 

Type IPP023N04N G IPB023N04N G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS MOSFET for ORing and Uninterruptible Power Supply R 2.3 m DS(on),max Qualified according to JEDEC1) for target applications I 90 A D N-channel Normal level Ultra-low on-resistance R DS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal

 4.2. Size:258K  inchange semiconductor
 ipb023n04n.pdf 

isc N-Channel MOSFET Transistor IPB023N04N FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 6.1. Size:671K  infineon
 ipb023n06n3.pdf 

pe IPB023N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 14 D Q H35