IPB023N04NG Datasheet and Replacement
Type Designator: IPB023N04NG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 6.6 nS
Cossⓘ - Output Capacitance: 2000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: TO263
IPB023N04NG substitution
IPB023N04NG Datasheet (PDF)
ipb023n04n ipp023n04ng ipb023n04ng.pdf

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ipp023n04n-g ipb023n04n-g.pdf

Type IPP023N04N GIPB023N04N GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS MOSFET for ORing and Uninterruptible Power Supply R 2.3mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel Normal level Ultra-low on-resistance RDS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal
ipb023n04n.pdf

isc N-Channel MOSFET Transistor IPB023N04NFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
ipb023n06n3.pdf

pe IPB023N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 14 DQ H35
Datasheet: IPB016N06L3G , IPB017N06N3G , IPB019N06L3G , IPB019N08N3G , IPB020N04NG , IPB020NE7N3G , IPB021N06N3G , IPB022N04LG , IRF640 , IPB023N06N3G , IPB025N08N3G , IPB025N10N3G , IPB027N10N3G , IPB029N06N3G , IPB030N08N3G , IPB031NE7N3G , IPB034N03LG .
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