IPB023N04NG MOSFET Datasheet: N-Ch, 40V, 90A. Full specification with pinout and replacement list

IPB023N04NG Specs and Replacement

   Type Designator: IPB023N04NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO263

IPB023N04NG substitution

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IPB023N04NG datasheet

..1. Size:583K infineon
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4.1. Size:245K infineon
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Type IPP023N04N G IPB023N04N G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS MOSFET for ORing and Uninterruptible Power Supply R 2.3 m DS(on),max Qualified according to JEDEC1) for target applications I 90 A D N-channel Normal level Ultra-low on-resistance R DS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal... See More ⇒

4.2. Size:258K inchange semiconductor
ipb023n04n.pdf pdf_icon

isc N-Channel MOSFET Transistor IPB023N04N FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

6.1. Size:671K infineon
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pe IPB023N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 14 D Q H35... See More ⇒

Detailed specifications: IPB016N06L3G , IPB017N06N3G , IPB019N06L3G , IPB019N08N3G , IPB020N04NG , IPB020NE7N3G , IPB021N06N3G , IPB022N04LG , IRFP460 , IPB023N06N3G , IPB025N08N3G , IPB025N10N3G , IPB027N10N3G , IPB029N06N3G , IPB030N08N3G , IPB031NE7N3G , IPB034N03LG .