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APT6015JN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: APT6015JN

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 520 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 38 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 24 ns

Выходная емкость (Cd): 1025 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.15 Ohm

Тип корпуса: SOT227

Аналог (замена) для APT6015JN

 

APT6015JN Datasheet (PDF)

1.1. apt6015jn.pdf Size:62K _apt

APT6015JN
APT6015JN

D G APT6015JN 600V 38.0A 0.15Ω S APT6018JN 600V 35.0A 0.18Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6015JN 6018JN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Cu

2.1. apt6015jvr.pdf Size:70K _apt

APT6015JN
APT6015JN

APT6015JVR 600V 35A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

 3.1. apt6015.pdf Size:60K _apt

APT6015JN
APT6015JN

APT6015B2VR 600V 38A 0.150Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

3.2. apt6015lvr.pdf Size:62K _apt

APT6015JN
APT6015JN

APT6015LVR 600V 38A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. D • Faster Switching • 100% Avalanche Tested • Lowe

 3.3. apt6015b2vr.pdf Size:60K _apt

APT6015JN
APT6015JN

APT6015B2VR 600V 38A 0.150Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

3.4. apt6015lvfr.pdf Size:59K _apt

APT6015JN
APT6015JN

APT6015LVFR 600V 38A 0.150W POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Teste

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