All MOSFET. APT6015JN Datasheet

 

APT6015JN MOSFET. Datasheet pdf. Equivalent

Type Designator: APT6015JN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 520 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 1025 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: SOT227

APT6015JN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT6015JN Datasheet (PDF)

1.1. apt6015jn.pdf Size:62K _apt

APT6015JN
APT6015JN

D G APT6015JN 600V 38.0A 0.15Ω S APT6018JN 600V 35.0A 0.18Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 6015JN 6018JN UNIT VDSS Drain-Source Voltage 600 600 Volts ID Continuous Drain Cu

2.1. apt6015jvr.pdf Size:70K _apt

APT6015JN
APT6015JN

APT6015JVR 600V 35A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

 3.1. apt6015.pdf Size:60K _apt

APT6015JN
APT6015JN

APT6015B2VR 600V 38A 0.150Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

3.2. apt6015lvr.pdf Size:62K _apt

APT6015JN
APT6015JN

APT6015LVR 600V 38A 0.150Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. D • Faster Switching • 100% Avalanche Tested • Lowe

 3.3. apt6015b2vr.pdf Size:60K _apt

APT6015JN
APT6015JN

APT6015B2VR 600V 38A 0.150Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

3.4. apt6015lvfr.pdf Size:59K _apt

APT6015JN
APT6015JN

APT6015LVFR 600V 38A 0.150W POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Teste

Datasheet: APT50M50JVFR , APT50M50JVR , APT50M50PVR , APT50M60JN , APT50M85JVFR , APT50M85JVR , APT6013JVR , APT6015B2VR , 2N3824 , APT6015JVR , APT6015LVR , APT6017WVR , APT6020LVR , APT6025BVR , APT6027HVR , APT6030BN , APT6030BVR .

 
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