Справочник MOSFET. IPD034N06N3G

 

IPD034N06N3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPD034N06N3G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 161 ns
   Cossⓘ - Выходная емкость: 1700 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IPD034N06N3G

 

 

IPD034N06N3G Datasheet (PDF)

 ..1. Size:433K  infineon
ipd034n06n3g.pdf

IPD034N06N3G
IPD034N06N3G

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 3.1. Size:436K  infineon
ipd034n06n3.pdf

IPD034N06N3G
IPD034N06N3G

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 3.2. Size:243K  inchange semiconductor
ipd034n06n3.pdf

IPD034N06N3G
IPD034N06N3G

isc N-Channel MOSFET Transistor IPD034N06N3IIPD034N06N3FEATURESStatic drain-source on-resistance:RDS(on)3.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

 9.1. Size:423K  infineon
ipd038n04n.pdf

IPD034N06N3G
IPD034N06N3G

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 9.2. Size:400K  infineon
ipd03n03lag.pdf

IPD034N06N3G
IPD034N06N3G

IPD03N03LA G IPS03N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD Version) 3.2mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C operating temperatu

 9.3. Size:668K  infineon
ipd031n03l.pdf

IPD034N06N3G
IPD034N06N3G

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 9.4. Size:611K  infineon
ipd038n06n32 ipd038n06n3g.pdf

IPD034N06N3G
IPD034N06N3G

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 9.5. Size:429K  infineon
ipd036n04l.pdf

IPD034N06N3G
IPD034N06N3G

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 9.6. Size:153K  infineon
ipd036n04lg.pdf

IPD034N06N3G
IPD034N06N3G

TypeIPD036N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.6mDS(on),max Optimized technology for DC/DC convertersI 90 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 100% Av

 9.7. Size:445K  infineon
ipd031n06l3.pdf

IPD034N06N3G
IPD034N06N3G

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 9.8. Size:865K  infineon
ipd033n06n.pdf

IPD034N06N3G
IPD034N06N3G

IPD033N06NMOSFETD-PAKOptiMOSTM Power-Transistor, 60 VFeatures Optimized for synchronous rectificationtab 100% avalanche tested Superior thermal resistance N-channel, normal level1 2 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Table 1 Key Performance Paramete

 9.9. Size:444K  infineon
ipd035n06l3.pdf

IPD034N06N3G
IPD034N06N3G

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 9.10. Size:671K  infineon
ipd031n03lg ips031n03lg.pdf

IPD034N06N3G
IPD034N06N3G

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 9.11. Size:2552K  cn vbsemi
ipd036n04lg.pdf

IPD034N06N3G
IPD034N06N3G

IPD036N04LGwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM

 9.12. Size:243K  inchange semiconductor
ipd038n06n3.pdf

IPD034N06N3G
IPD034N06N3G

isc N-Channel MOSFET Transistor IPD038N06N3,IIPD038N06N3FEATURESStatic drain-source on-resistance:RDS(on)3.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 9.13. Size:241K  inchange semiconductor
ipd031n03l.pdf

IPD034N06N3G
IPD034N06N3G

isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03LFEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV

 9.14. Size:242K  inchange semiconductor
ipd036n04l.pdf

IPD034N06N3G
IPD034N06N3G

isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04LFEATURESStatic drain-source on-resistance:RDS(on)3.6mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV

 9.15. Size:242K  inchange semiconductor
ipd031n06l3.pdf

IPD034N06N3G
IPD034N06N3G

isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3FEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6

 9.16. Size:242K  inchange semiconductor
ipd033n06n.pdf

IPD034N06N3G
IPD034N06N3G

isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06NFEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

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History: 75N75G-TF3-T

 

 
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