Справочник MOSFET. IPD088N06N3G

 

IPD088N06N3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPD088N06N3G
   Маркировка: 088N06N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 71 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 36 nC
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 640 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0088 Ohm
   Тип корпуса: TO252

 Аналог (замена) для IPD088N06N3G

 

 

IPD088N06N3G Datasheet (PDF)

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 ipd088n06n3 ipd088n06n3g.pdf

IPD088N06N3G IPD088N06N3G

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 ipd088n06n3g.pdf

IPD088N06N3G IPD088N06N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD088N06N3GFEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC silverboxUPS and solarABSOLUTE

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IPD088N06N3G IPD088N06N3G

isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3FEATURESStatic drain-source on-resistance:RDS(on)8.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

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 9.1. Size:778K  infineon
 ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf

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IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 9.2. Size:757K  infineon
 ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf

IPD088N06N3G IPD088N06N3G

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 9.3. Size:242K  inchange semiconductor
 ipd082n10n3.pdf

IPD088N06N3G IPD088N06N3G

isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3FEATURESStatic drain-source on-resistance:RDS(on)8.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

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