IPD60R385CP. Аналоги и основные параметры
Наименование производителя: IPD60R385CP
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 38 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.385 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD60R385CP
- подборⓘ MOSFET транзистора по параметрам
IPD60R385CP даташит
..1. Size:590K infineon
ipd60r385cp.pdf 

CoolMOS CP 600V 600V CoolMOS CP Power Transistor IPD60R385CP Data Sheet Rev. 2.4 Final Power Management & Multimarket IPD60R385CP C IMOS # A0
..2. Size:243K inchange semiconductor
ipd60r385cp.pdf 

isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP FEATURES Static drain-source on-resistance RDS(on) 0.385 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
6.2. Size:2739K infineon
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor
6.3. Size:1368K infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according
6.4. Size:998K infineon
ipd60r380e6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C
6.5. Size:2540K infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf 

IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli
6.6. Size:943K infineon
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C
6.7. Size:242K inchange semiconductor
ipd60r380p6.pdf 

isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc
6.8. Size:242K inchange semiconductor
ipd60r380c6.pdf 

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS
6.9. Size:210K inchange semiconductor
ipd60r380e6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R380E6 FEATURES With TO-252(DPAK) packaging With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC si
Другие IGBT... IPD50P04P4L-11, IPD50R399CP, IPD50R520CP, IPD530N15N3G, IPD600N25N3G, IPD60R1K4C6, IPD60R2K0C6, IPD60R380C6, 2SK3878, IPD60R3K3C6, IPD60R450E6, IPD60R520C6, IPD60R520CP, IPD60R600C6, IPD60R600CP, IPD60R600E6, IPD60R750E6