All MOSFET. IPD60R385CP Datasheet

 

IPD60R385CP MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD60R385CP

Marking Code: 6R385P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 38 pF

Maximum Drain-Source On-State Resistance (Rds): 0.385 Ohm

Package: TO252

IPD60R385CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R385CP Datasheet (PDF)

0.1. ipd60r385cp.pdf Size:670K _infineon

IPD60R385CP
IPD60R385CP

IPD60R385CP CססIMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,0.2. ipd60r385cp.pdf Size:243K _inchange_semiconductor

IPD60R385CP
IPD60R385CP

isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.385Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 6.1. ipd60r380e6.pdf Size:998K _infineon

IPD60R385CP
IPD60R385CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.5 Final Power Management & Multimarket C lMO eг г n i t г I I I D O‐ O‐ D 1 Descriptiסn t b tab C lMO i гe l ti n г te n l г i lt e p eг MO e i ne г in t t e peгj n ti n ) pгin iple n 2 pi neeгe b In ine n e n l ie C

6.2. ipd60r380c6.pdf Size:1213K _infineon

IPD60R385CP
IPD60R385CP

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ

 6.3. ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf Size:2739K _infineon

IPD60R385CP
IPD60R385CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accor

6.4. ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf Size:2540K _infineon

IPD60R385CP
IPD60R385CP

IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

 6.5. ipd60r380e6.pdf Size:210K _inchange_semiconductor

IPD60R385CP
IPD60R385CP

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD60R380E6 ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC si

6.6. ipd60r380c6.pdf Size:242K _inchange_semiconductor

IPD60R385CP
IPD60R385CP

isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS

6.7. ipd60r380p6.pdf Size:242K _inchange_semiconductor

IPD60R385CP
IPD60R385CP

isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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