Справочник MOSFET. IPI60R250CP

 

IPI60R250CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPI60R250CP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IPI60R250CP

 

 

IPI60R250CP Datasheet (PDF)

 ..1. Size:556K  infineon
 ipi60r250cp.pdf

IPI60R250CP IPI60R250CP

IPI60R250CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ::

 ..2. Size:287K  inchange semiconductor
 ipi60r250cp.pdf

IPI60R250CP IPI60R250CP

isc N-Channel MOSFET Transistor IPI60R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 7.1. Size:1432K  infineon
 ipi60r280c6.pdf

IPI60R250CP IPI60R250CP

MOSFET+ =L9D - PA

 7.2. Size:556K  infineon
 ipi60r299cp.pdf

IPI60R250CP IPI60R250CP

IPI60R299CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"%

 7.3. Size:1587K  infineon
 ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf

IPI60R250CP IPI60R250CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 7.4. Size:286K  inchange semiconductor
 ipi60r280c6.pdf

IPI60R250CP IPI60R250CP

isc N-Channel MOSFET Transistor IPI60R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of useABSOLUTE MA

 7.5. Size:287K  inchange semiconductor
 ipi60r299cp.pdf

IPI60R250CP IPI60R250CP

isc N-Channel MOSFET Transistor IPI60R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

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