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IPP60R125CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPP60R125CP

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 208 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Максимально допустимый постоянный ток стока (Id): 25 A

Общий заряд затвора (Qg): 53 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.125 Ohm

Тип корпуса: TO220

Аналог (замена) для IPP60R125CP

 

 

IPP60R125CP Datasheet (PDF)

1.1. ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf Size:1257K _update-mosfet

IPP60R125CP
IPP60R125CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CססIMOS C6 Pסwer Transistסr IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descriptiסn CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

1.2. ipp60r125cp rev2.2.pdf Size:571K _infineon

IPP60R125CP
IPP60R125CP

IPP60R125CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,I / xQg ON 0.125 DS(on) max V 2 AIG6 ADL <6I: 8=6G<: 5 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound PG?TO220 ::7!"% # 4= =;

 1.3. ipp60r125p6 ipw60r125p6.pdf Size:2729K _infineon

IPP60R125CP
IPP60R125CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

1.4. ipp60r125p6.pdf Size:245K _inchange_semiconductor

IPP60R125CP
IPP60R125CP

isc N-Channel MOSFET Transistor IPP60R125P6,IIPP60R125P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSO

 1.5. ipp60r125c6.pdf Size:275K _inchange_semiconductor

IPP60R125CP
IPP60R125CP

isc N-Channel MOSFET Transistor IPP60R125C6,IIPP60R125C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us

1.6. ipp60r125cp.pdf Size:245K _inchange_semiconductor

IPP60R125CP
IPP60R125CP

isc N-Channel MOSFET Transistor IPP60R125CP,IIPP60R125CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

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