IPP60R125CP Datasheet. Specs and Replacement

Type Designator: IPP60R125CP  📄📄 

Marking Code: 6R125P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

Qg ⓘ - Total Gate Charge: 53 nC

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO220

  📄📄 Copy 

IPP60R125CP substitution

- MOSFET ⓘ Cross-Reference Search

 

IPP60R125CP datasheet

 ..1. Size:571K  infineon
ipp60r125cp.pdf pdf_icon

IPP60R125CP

IPP60R125CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 7!"% ... See More ⇒

 ..2. Size:245K  inchange semiconductor
ipp60r125cp.pdf pdf_icon

IPP60R125CP

isc N-Channel MOSFET Transistor IPP60R125CP IIPP60R125CP FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 4.1. Size:1257K  infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf pdf_icon

IPP60R125CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj... See More ⇒

 4.2. Size:275K  inchange semiconductor
ipp60r125c6.pdf pdf_icon

IPP60R125CP

isc N-Channel MOSFET Transistor IPP60R125C6 IIPP60R125C6 FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us... See More ⇒

Detailed specifications: IPP50R399CP, IPP50R520CP, IPP530N15N3G, IPP600N25N3G, IPP60R099C6, IPP60R099CP, IPP60R099CPA, IPP60R125C6, IRF9540N, IPP60R160C6, IPP60R165CP, IPP60R190C6, IPP60R190E6, IPP60R199CP, IPP60R250CP, IPP60R280C6, IPP60R280E6

Keywords - IPP60R125CP MOSFET specs

 IPP60R125CP cross reference

 IPP60R125CP equivalent finder

 IPP60R125CP pdf lookup

 IPP60R125CP substitution

 IPP60R125CP replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.