IRF3007L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF3007L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 62 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 89 nC
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 520 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0126 Ohm
Тип корпуса: TO262
IRF3007L Datasheet (PDF)
irf3007spbf irf3007lpbf.pdf
PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique
irf3007spbf irf3007lpbf.pdf
PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique
irf3007l.pdf
Isc N-Channel MOSFET Transistor IRF3007LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75
irf3007.pdf
PD -94424AAUTOMOTIVE MOSFETIRF3007Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsDFeaturesVDSS = 75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 0.0126 Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] QualifiedID = 75ASDescriptionSpecifically designed for Autom
irf3007pbf.pdf
PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve
auirf3007.pdf
PD - 96417AUTOMOTIVE GRADEAUIRF3007HEXFET Power MOSFETFeaturesDl Advanced Planar Technology V(BR)DSS75Vl Low On-ResistanceRDS(on) typ.10.5ml 175C Operating Temperaturemax 12.6ml Fast SwitchingGID (Silicon Limited)l Fully Avalanche Rated 80Al Repetitive Avalanche Allowed SID (Package Limited)75Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive
irf3007pbf.pdf
PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve
irf3007.pdf
isc N-Channel MOSFET Transistor IRF3007IIRF3007FEATURESStatic drain-source on-resistance:RDS(on) 12.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
irf3007s.pdf
Isc N-Channel MOSFET Transistor IRF3007SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918