All MOSFET. IRF3007L Datasheet

 

IRF3007L Datasheet and Replacement


   Type Designator: IRF3007L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 62 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0126 Ohm
   Package: TO262
      - MOSFET Cross-Reference Search

 

IRF3007L Datasheet (PDF)

 ..1. Size:323K  international rectifier
irf3007spbf irf3007lpbf.pdf pdf_icon

IRF3007L

PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique

 ..2. Size:256K  inchange semiconductor
irf3007l.pdf pdf_icon

IRF3007L

Isc N-Channel MOSFET Transistor IRF3007LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

 7.1. Size:149K  international rectifier
irf3007.pdf pdf_icon

IRF3007L

PD -94424AAUTOMOTIVE MOSFETIRF3007Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsDFeaturesVDSS = 75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 0.0126 Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] QualifiedID = 75ASDescriptionSpecifically designed for Autom

 7.2. Size:262K  international rectifier
irf3007pbf.pdf pdf_icon

IRF3007L

PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP048N04N | 2SK4096LS | UT8205A | MTM23223 | CST30N10D | IRFB4110G | WML11N80M3

Keywords - IRF3007L MOSFET datasheet

 IRF3007L cross reference
 IRF3007L equivalent finder
 IRF3007L lookup
 IRF3007L substitution
 IRF3007L replacement

 

 
Back to Top

 


 
.