Справочник MOSFET. IRFB260N

 

IRFB260N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB260N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 380 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 64 ns
   Cossⓘ - Выходная емкость: 580 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRFB260N

 

 

IRFB260N Datasheet (PDF)

 ..1. Size:170K  international rectifier
irfb260npbf.pdf

IRFB260N
IRFB260N

PD - 95473SMPS MOSFETIRFB260NPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.040 56Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to Reduce Switching Lossesl Fully Characterized Capacitance Including Effective COSS toSimplify Design, (See App. Note AN1001)l Fully Characterized Avalanche Voltage and CurrentTO-220ABAb

 ..2. Size:90K  international rectifier
irfb260n.pdf

IRFB260N
IRFB260N

PD - 94270SMPS MOSFETIRFB260NHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.040 56ABenefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS toSimplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and CurrentTO-220ABAbsolute Maximum Ratin

 ..3. Size:170K  infineon
irfb260npbf.pdf

IRFB260N
IRFB260N

PD - 95473SMPS MOSFETIRFB260NPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.040 56Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to Reduce Switching Lossesl Fully Characterized Capacitance Including Effective COSS toSimplify Design, (See App. Note AN1001)l Fully Characterized Avalanche Voltage and CurrentTO-220ABAb

 ..4. Size:245K  inchange semiconductor
irfb260n.pdf

IRFB260N
IRFB260N

isc N-Channel MOSFET Transistor IRFB260NIIRFB260NFEATURESStatic drain-source on-resistance:RDS(on) 40mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFully Characterized Avalanche Voltage and CurrentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.1. Size:183K  international rectifier
irfb20n50k.pdf

IRFB260N
IRFB260N

PD - 94418AIRFB20N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply500V 0.21 20Al High Speed Power Switchingl Hard Switched and High FrequencyCircuitsBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Charact

 9.2. Size:142K  international rectifier
irfs23n15d irfb23n15d irfsl23n15d.pdf

IRFB260N
IRFB260N

PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan

 9.3. Size:278K  international rectifier
irfb23n15dpbf irfsl23n15dpbf.pdf

IRFB260N
IRFB260N

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

 9.4. Size:217K  international rectifier
irfb20n50kpbf.pdf

IRFB260N
IRFB260N

PD - 94984IRFB20N50KPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply500V 0.21 20Al High Speed Power Switchingl Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

 9.5. Size:279K  international rectifier
irfb23n20dpbf irfs23n20dpbf.pdf

IRFB260N
IRFB260N

PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc

 9.6. Size:196K  international rectifier
irfb23n20d.pdf

IRFB260N
IRFB260N

PD- 93904AIRFB23N20D IRFS23N20DSMPS MOSFET IRFSL23N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.10 24ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT

 9.7. Size:858K  vishay
irfb20n50k sihfb20n50k.pdf

IRFB260N
IRFB260N

IRFB20N50K, SiHFB20N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.21 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 110COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 54and CurrentConf

 9.8. Size:278K  infineon
irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf

IRFB260N
IRFB260N

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

 9.9. Size:275K  infineon
irfb23n20dpbf irfs23n20dpbf irfsl23n20dpbf.pdf

IRFB260N
IRFB260N

PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc

 9.10. Size:844K  cn vbsemi
irfb23n15d.pdf

IRFB260N
IRFB260N

IRFB23N15Dwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise no

 9.11. Size:227K  inchange semiconductor
irfb23n15d.pdf

IRFB260N
IRFB260N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB23N15DIIRFB23N15DFEATURESStatic drain-source on-resistance:RDS(on) 90mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)a

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