All MOSFET. IRFB260N Datasheet

 

IRFB260N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB260N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 380 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 56 A

Total Gate Charge (Qg): 150 nC

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO220AB

IRFB260N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB260N Datasheet (PDF)

1.1. irfb260npbf.pdf Size:170K _upd-mosfet

IRFB260N
IRFB260N

PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.040Ω 56A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB Ab

1.2. irfb260n.pdf Size:90K _international_rectifier

IRFB260N
IRFB260N

PD - 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.040? 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220AB Absolute Maximum Ratings Pa

 5.1. irfb20n50kpbf.pdf Size:217K _upd-mosfet

IRFB260N
IRFB260N

PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET® Power MOSFET AppIications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

5.2. irfb23n15dpbf.pdf Size:278K _upd-mosfet

IRFB260N
IRFB260N

PD - 95535 IRFB23N15DPbF IRFS23N15DPbF SMPS MOSFET IRFSL23N15DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.090Ω 23A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 l F

 5.3. irfb23n20dpbf.pdf Size:279K _upd-mosfet

IRFB260N
IRFB260N

PD - 95536 IRFB23N20DPbF IRFS23N20DPbF SMPS MOSFET IRFSL23N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.10Ω 24A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc

5.4. irfb20n50k.pdf Size:183K _upd-mosfet

IRFB260N
IRFB260N

PD - 94418A IRFB20N50K SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Charact

 5.5. irfb23n20d.pdf Size:196K _international_rectifier

IRFB260N
IRFB260N

PD- 93904A IRFB23N20D IRFS23N20D SMPS MOSFET IRFSL23N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.10? 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220A

5.6. irfb20n50kpbf.pdf Size:192K _international_rectifier

IRFB260N
IRFB260N

PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET AppIications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21? 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Full

5.7. irfs23n15d irfb23n15d irfsl23n15d.pdf Size:142K _international_rectifier

IRFB260N
IRFB260N

PD - 93894A IRFB23N15D IRFS23N15D SMPS MOSFET IRFSL23N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090Ω 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalan

5.8. irfb20n50k.pdf Size:115K _international_rectifier

IRFB260N
IRFB260N

PD - 94418 IRFB20N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21? 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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